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| geometry process details principal device types cmpz5235b thru cmpz5261b gross die per 4 inch wafer 36,642 process cpz19 zener diode 0.5 watt zener diode chip process epitaxial planar die size 17.7 x 17.7 mils die thickness 7.5 mils anode bonding pad area 11 x 11 mils top side metalization al - 13,000? back side metalization au - 14,000? backside cathode www.centralsemi.com r5 (22-march 2010)
process cpz19 typical electrical characteristics www.centralsemi.com r5 (22-march 2010) |
Price & Availability of CPZ1910
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